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NUS6160MN
Low Profile Overvoltage
Protection IC with
Integrated MOSFET
This device represents a new level of safety and integration by
combining an overvoltage protection circuit (OVP) with a dual 20 V
P ? channel power MOSFET. The OVP is specifically designed to
protect sensitive electronic circuitry from overvoltage transients and
power supply faults. During such events, the IC quickly disconnects
the input supply from the load, thus protecting it. The integration of
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MARKING
DIAGRAM
the additional transistor and power MOSFET reduces layout space and
promotes better charging performance.
The IC is optimized for applications that use an external AC ? DC
adapter or a car accessory charger to power a portable product or
recharge its internal batteries.
1
QFN22
CASE 485AT
NUS
6160
ALYW G
G
Features
? Overvoltage Turn ? Off Time of Less Than 1.5 m s
? Undervoltage Lockout Protection; 3.0 V, Nominal
? High Accuracy Undervoltage Threshold of 5.0%
? ? 20 V Integrated P ? Channel Power MOSFET
? Low R DS(on) = 64 m W @ ? 4.5 V
? Compact 3.0 x 4.0 mm QFN Package
? Maximum Solder Reflow Temperature @ 260 ° C
? This is a Pb ? Free Device
Benefits
? Provide Battery Protection
? Integrated Solution Offers Cost and Space Savings
? Integrated Solution Improves System Reliability
? Optimized for Commercial PMUs from Top Suppliers
Applications
? Portable Computers and PDAs
? Cell Phones and Handheld Products
? Digital Cameras
? Semiconductor Components Industries, LLC, 2008
December, 2008 ? Rev. 0
NUS6160 = Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping ?
NUS6160MNTWG QFN22 3000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NUS6160MN/D
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